This tutorial shows how to run a device simulation with line edge roughness of the gate on the example of a FinFET.
In the first section the roughness is added to one edge. The second section shows the simulation of the structure. The last section shows the creation and simulation of the roughness of all three Oxide edges.
This tutorial is an extension of the “Variability Simulation-1” tutorial. If you are not familiar with starting job-server and job-host or the statistical analysis in GTS Framework we recommend to start with the “Variability Simulation-1” tutorial.