Global TCAD Solutions

Predictions based on Physics

LDMOS Simulation

This tutorial shows how to create an LDMOS transistor for the 50V range using a template. Different drift-zone lengths and the influence of impact-ionization are investigated, followed by transient simulations.

It is assumed that you are already familiar with GTS Framework and the idea of projects and ToolFolders, as explained in the Getting Started tutorial.

This tutorial was created using GTS Framework Release 2011. Other releases might need adjustments or have slightly different user interfaces.