Global TCAD Solutions

Predictions based on Physics

SOI FinFET

Overview

This example demonstrates a basic simulation flow on the basis of an SOI FinFET.  Initially, the simulation structure is generated based on device templates using GTS Structure.  Subsequently, different simulation modes of Minimos-NT such as the Drift Diffusion and Density Gradient models are presented and results are compared.

This example was created using GTS Framework Release 2016.09. Other releases might need adjustments or have slightly different user interfaces.