Global TCAD Solutions

Predictions based on Physics

SiC Schottky Barrier Diode

This example demonstrates the simulation of SiC devices on the example of a Schottky Barrier
Diode [1] . ToolFolder 001 contains the structure (compare Figure 1).

ToolFolders 002-005 show the forward characteristics for different temperatures, see Figure 2.
Calculation of the breakthrough / snapback is done in Toolfolder 010 and 011. In ToolFolder 010
the first part of the breakdown curve is calculated using a voltage stepping until the current starts
to increase, in this case at about 850 V. The successor ToolFolder 011 uses the last step of 010 as
initial guess and switches to current stepping. The complete breakdown curve is shown in Figure 3.
Figures 4 and 5 show the electric field, the impact ionization rate and the current density of the
breakthrough at 0.05 A/um and approx.400 Volt (top most point in Figure 3).

This example was created using GTS Framework Release 2016.09. Other releases might need adjustments or have slightly different user interfaces.

 

 

The structure and net dopant concentration of the Schottky Barrier Diode
Forward characteristics at different temperatures: 250 K (cyan), 300 K (blue), 350 K(orange), 400 K (red)
Breakthrough/ snapback curve
Electric field in the break down case
Impact ionization generation rate in the break down case
Electron current in the break down case
Hole current in the break down case