This example demonstrates the hot-carrier degradation model implemented in the GTS Framework. In a first step, the linear drain current degradation under hot-carrier stress is investigated in 2d simulations. The stress leads to a newly generated interface trap density. This density is then used in a 3d simulation to generate discrete near-interface charges to prepare the device for simulations at a given state of degradation.
This example was created using GTS Framework Release 2013 Release 2014.03. Other releases might need adjustments or have slightly different user interfaces.