Global TCAD Solutions

Cutting-Edge TCAD
04.12.2016

SISPAD 2016 Best Paper Award: GTS among Top Three

GTS' paper 04.1 "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD" was ranked on third place.


 SISPAD Paper 2016 by Stanojevic et al

SISPAD Best Paper Award: 3rd Rank for GTS

A paper by GTS scientists was ranked 3rd place by the present members of the SISPAD Technical Program Committee:

  1. Paper O15.1: P. Lenarczyk, M. Luisier, Integrated Systems Laboratory, ETH Zürich, "Physical Modeling of Ferroelectric Field-Effect Transistors in the Negative Capacitance Regime
  2. Paper O4.3 by W. G. Vandenberghe and  M.V. Fischetti, University of Texas at Dallas, "Modeling Topological-Insulator Field-Effect Transistors Using the Boltzmann Equation"
  3. Paper O4.1 by Z. Stanojević, M. Karner, O. Baumgartner, HW. Karner, C. Kernstock, H. Demel, F. Mitterbauer, Global TCAD Solutions GmbH, "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD"

We are honored by receiving this award, and we congratulate all awarded teams. For more, please see the Best Paper / Poster Awards page at the SISPAD 2016 website, where the paper is available for download.