Global TCAD Solutions

Cutting-Edge TCAD
06.05.2015

More Physics for Device Design – GTS @ SNW 2015

Complementing empirical models by physical ones is a breakthrough in nano-scaled device simulation. GTS researchers present their unique tools at the 2015 Silicon Nanoelectronics Workshop.


Electron density visualized in slices of a nanowire transistor

Physics-based Simulation of Upcoming Devices

Traditional empirical models alone yield elusive results for nano-scaled devices: they fail to provide insight in key phenomena, and suffer from a very limited prediction window because they do not consider the underlying physical effects of quantum mechanics.

2015 Silicon Nanoelectronics Workshop (SNW 2015)

At the SNW 2015 in Kyoto, GTS presents physics-based quantum-mechanical simulation of nano-scaled devices by example of a nanowire transistor. The used framework allows to extract device properties such as transfer-characteristics, RON, subthreshold-slope and DIBL directly from physical models. Next to higher accuracy, this provides the essential insights needed for targeted device design as well as efficient performance and reliability optimization.

2015 VLSI Symposia

Our staff will also attend the VLSI technology symposium, where they will be available for further discussions.

Pioneering in Physics-based Device Simulation

At small gate lengths, the physical effects of quantum mechanics have significant impact on device properties and may curb device operation entirely. 

electron mobility along the channel shows the scattering processes that limit the channel current at two different values of VDSAs leading specialists in classical and quantum-mechanical TCAD / device simulation, we at GTS are creating tools for upcoming device technologies. Simulating the underlying physical phenomena, GTS Framework brings physical modeling of semiconductor channels to device engineers. The unique coupling of a fast and accurate Schrödinger-Poisson solver/mobility extractor to a versatile device simulator provides a computationally efficient way of simulating nano-scaled devices on a physical basis. 

short-channel properties of a nanowire transistor – the threshold voltage roll-off and drain-induced barrier lowering (DIBL)

GTS Framework allows to extract device properties such as transfer-characteristics, RON, subthreshold-slope and DIBL by means of physical rather than empirical models at the same level of convenience.

In the upper figure, electron mobility along the channel shows the scattering processes that limit the channel current at two different values of VDS.

The lower figure shows short-channel properties of a nanowire transistor – the threshold voltage roll-off and drain-induced barrier lowering (DIBL).

References

SNW 2015: Rihga Royal Hotel, Kyoto, Japan. June 14-15
VLSI Symposia 2015: Rihga Royal Hotel, Kyoto, Japan. June 15-19

GTS Framework, VSP, Minimos-NT

Availability

The presented models and methods are available with the current version of GTS Framework.