Global TCAD Solutions

Cutting-Edge TCAD


GTS showcasing unique features of quantum-mechanical solver at IRPS, taking part at VLSI and SNW.

Simulation of Gate Stacks – Uniquely Close to Real Physics

2014 IEEE International Reliability Physics Symposium (IRPS)

Global TCAD solutions (GTS) invites engineers and scientists to visit its booth (No. 10) at the IEEE IRPS conference in Waikoloa, Hawaii. We will showcase GTS Framework 2014.03, which again pushes the limits of device reliability analysis with accurate prediction of bias temperature instability (BTI) on nano-scaled CMOS devices.

The second focus will be on simulation of non-planar device technologies by a full quantum-mechanical approach, which allows for better understanding of involved physics as well as unprecedented accuracy, and allows for using meaningful physical parameters instead of just empirical ones.

Full-Band Modeling of Mobility in p-Type FinFETs

2014 IEEE Silicon Nanoelectronics Workshop (SNW)

At the IEEE Silicon Nanoelectronics Workshop in Honolulu, colleagues from Vienna University of Technology will present a poster on modeling low-field mobility of ultra-narrow Si channels such as FinFETs, based on a full-band description of the electronic structure. This will be interesting to every present or future GTS customer, since the presented techniques are being integrated in GTS Framework 2014.

Nano-Devices / Non-Planar Technologies

2014 Symposia on VLSI Technology and Circuits

GTS will further take part in the VLSI Symposia in Honolulu, focusing on nano devices and non-planar technologies. We are happy to take the opportunity to exchange knowledge and experiences with scientists and engineers, and we will be pleased to hear about and perhaps address your specific simulation needs.


Ask for a Demo at Your Location

If you are interested, we will be happy to demonstrate GTS Framework at your location:

  • West coast: Week June 16th
  • East coast: Week June 23rd

For appointments, please contact GTS at office(at)!