Course description – Advanced TCAD for sub-N7 FinFETs and Nanowire Transistors
The course, held at IMEC academy, starts with an overview of the tools and installation. The hands-on tutorial "Getting Started" demonstrates basic tool usage on simple examples. We will show the preparation of device structures including analytical doping de nitions for TCAD simulations. Attendants will set up and run a DOE (design of experiment) simulation from structure generation to transport simulation and post-processing.
On day 2, attendants are invited to a guided practice to solve state-of-the- art TCAD device simulation problems. We will take a closer look at the application suite GTS Nano Device Simulator and perform mobility calculations and transport simulations of FinFET and nanowire devices. Furthermore, participants will gain experience on selected applications such as variability studies (random dopant uctuations, line edge roughness, ...) and reliability analysis (bias temperature instability).
Who should attend
This course addresses TCAD engineers from academia as well as industry interested in accurate simulation of advanced CMOS and memory devices.
As former scienti c staff at Vienna University of Technology (TU Wien), the presenters are actively engaged in scientific research, maintaining a close relationship to the university. Participating in national and international research projects, the GTS team is proud to name institutions such as IMEC as its partners. Relying on this strong scientific background, GTS is able to create unique products and services, with special expertise in advanced TCAD for nano-devices.
March 29-30, 2017, IMEC Belgium
Day 1, am: Talk
- Introduction, overview of the tools
- Preview: Application examples (nanowires and FinFETs)
Day 1, pm: Hands-On Session
- Getting started with GTS Framework
- Creating Devices: Structure Generation, Doping Definition
- Basic Device Simulation
- Design of experiment (DOE), Optimization, Fitting
Day 2, am: Talk, Hands-On Session
- Advanced Transport Simulation: Introducing GTS Nano Device Simulator
Day 2, pm: Choose Your Topic
- Guided hands-on session, choose from these topics:
Variability: RDD, MGG, LER – Statistical device & circuit analysis
Reliability: BTI, HCD Radiation effects (SET, SEU, TID)
FinFET mobility calculation – Cross-section, orientation, strain
Nanowires: Physical simulation – Short-channel, stacked NW, sub-N7
Logic Cell Analysis in TCAD – Mixed mode, compact model extraction
Mechanical Stress: Strain-relaxed buffer, raised S/D
We are looking forward to your attendance and discussing your ideas!
Contact: Oskar Baumgartner