GTS at IEEE IEDM 2015 in Washington DC
With a paper talk and a contribution to another paper at IEDM 2015, GTS again proves its leadership in physics-based TCAD device simulation — and invites for a special event.
Physical Modeling – a New Paradigm in Device Simulation
On Monday, GTS CTO Zlatan Stanojevic will present the paper "Physical Modeling – a New Paradigm in Device Simulation", co-authored by materialsdesign, Inc.:
We go far beyond classical TCAD and create a simulation framework ready for contemporary and future devices. We extend drift-diffusion device simulation with additional tools: a subband structure tool, a Boltzmann transport solver, and a quantum transport solver, allowing to capture every important aspect of device operation at the nano-scale.
Statistical Poly-Si Grain Boundary Model with Discrete Charging Defects and its 2D and 3D Implementation for Vertical 3D NAND Channels
In the same session, Robin Degraeve (imec) will present his paper "Statistical Poly-Si Grain Boundary Model with Discrete Charging Defects and its 2D and 3D Implementation for Vertical 3D NAND Channels". GTS scientists have contributed by implementing the 3D simulation described in the paper.
A new grain boundary model is proposed consisting of 1) a scattering part modeled by reduced mobility, independent of the microscopic details of the boundary, and 2) discrete randomly positioned charging defects. 2D and 3D model implementations are demonstrated, explaining several statistical properties in scaled poly-Si channel devices (particularly vertical NAND devices).
IEDM 2015 Washington DC – Program / Details
For more information, please see Session 5 at the IEDM website.
Special Event in cooperation with MaterialsDesign
Materials Design, Inc. and Global TCAD Solutions invite you to join us for a unique experience – combining the best-in-class TCAD and atomistic simulation tools to create an integrated modeling framework.
- Learn how our combined capabilities can help you make a step change in the device design and understanding materials properties and interactions.
- Discuss modeling problems that matter to you with our scientists and engineers in person!
- At the reception on December 8, there will be room for informal discussions with our experts and key leadership.
Discuss your topics with GTS scientists, have some snacks and beverages
— and take part in our lottery draw to win* a Pebble Time Steel smartwatch.
We are loooking forward to meeting you in Washington DC!
GTS at IEDM 2015
|Mon, Dec. 7, Georgetown Room: IEDM Session 5: Modeling and Simulation,
Physical Modeling for Advanced Devices, Power Devices, and Memories
|Physical Modeling – a New Paradigm in Device Simulation
(co-authored by materialsdesign scientists)
Statistical Poly-Si Grain Boundary Model with Discrete
Charging Defects and its 2D and 3D Implementation
for Vertical 3D NAND Channels (co-authored by GTS scientists)
|Mon, Dec. 7, Holmead West Room: MD+GTS Special: Predictive Simulation of Future Devices
– Path-Finding in the Final Stage of Device Scaling
MD + GTS
|Atomistic Simulation Meets Device Modeling:
Design for performance, manufacturing, and reliability
Individual interactions to see how we can help solve your challenges
Tue, Dec. 8, Northwest Room: MD+GTS Special: Reception
||MD + GTS
||Reception and informal discussions with our experts and key leadership
*The draw takes place among visitors of our special event. Any recourse to the courts of law is excluded.