We would love to inform you about relevant events and developments at GTS,
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(We keep distortion to a minimum, not releasing more than ca. 12 items per year.)
Pioneering for the 3nm node, GTS to present subband BTE solver with fully integrated source/drain-tunneling current calculation based on the WKB-approximation.
GTS Scientist Franz Schanovsky member of IEDM Reliability of Systems and Devices Committee, co-chairing session Emerging Transistor Reliability and Pertinent Strategies
Visit the GTS booth in the exhibits area of IEDM 2019!
Meet GTS CTO Zlatan Stanojević in Krakòw
3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory (D. Verreck, co-authored by GTS)
From June 2nd to 6th we will be at the Design Automation Conference 2019 in Las Vegas Convention Center.Visit our us at booth 1118 (next to the Coffee Area) - and /or come to poster session 125.19 where we will present the...
GTS scientific team enhanced by oxide reliability modeling specialist
In the new CD Laboratory at the TU Wien, Infineon Technologies AG, ams AG and Global TCAD Solutions GmbH are working together on understanding the physics of gate oxide reliability in semiconductor devices.
Zlatan Stanojević, CTO of Global TCAD Solutions, will hold a talk on "Innovation in TCAD from a Start-Up Perspective" in the Modelling and Simulation session, at 15:15 on Dec. 18th, 2018.
Visit the GTS booth in the IEDM exhibits area and join our presentation at MOS-AK workshop on Dec 5
New applications: TCAD in DTCO, self-heating (SH) simulation for logic cells, germanium gate-all-around architectures (GAA)
GTS presenting first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells.
Next to its contribution at VLSI/SNW 2018, GTS takes part in a FFG research project to create a 3D TCAD model for ferroelectric materials.
Modeling and simulation of V-NAND poly-silicon channel trans-conductance, including variability
Presenting a Physical Modeling Study Based on 3D Phase-Space Subband Boltzmann Transport for Fully-Depleted SOI Technology
New applications: V-NAND transconductance variability, physical simulation of FD-SOI technology
Visit the GTS booth in the IEDM exhibits area to learn about our latest products and developments!
Introducing GTS local representative for East Asia
GTS was identified as one of the top 10 "Best Young SME" by the European Commission Innovation Radar 2017.
GTS workshops at two events in India, coordinated by our partner TNL.