Global TCAD Solutions

Cutting-Edge TCAD


Events and Latest Developments at GTS

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We would love to inform you about relevant events and developments at GTS,
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(We keep distortion to a minimum, not releasing more than ca. 12 items per year.)


GTS@ Virtual SISPAD 2020: S/D-Tunnelling in 3nm SiGe/Ge

Pioneering for the 3nm node, GTS to present subband BTE solver with fully integrated source/drain-tunneling current calculation based on the WKB-approximation.


IEDM 2019: Emerging Transistor Reliability and Pertinent Strategies

GTS Scientist Franz Schanovsky member of IEDM Reliability of Systems and Devices Committee, co-chairing session Emerging Transistor Reliability and Pertinent Strategies



Visit the GTS booth in the exhibits area of IEDM 2019!


ESSDERC: Chairing session "Multi-physics Modeling"

Meet GTS CTO Zlatan Stanojević in Krakòw


GTS @SISPAD 2019 in Udine: VNAND SONOS Variability

3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory (D. Verreck, co-authored by GTS)


Visit us at DAC 2019!

From June 2nd to 6th we will be at the Design Automation Conference 2019 in Las Vegas Convention Center.Visit our us at booth 1118 (next to the Coffee Area) - and /or come to poster session 125.19 where we will present the...


GTS is proud to hire the lead developer of compact physics software Comphy

GTS scientific team enhanced by oxide reliability modeling specialist


New Christian Doppler Lab on “single defect spectroscopy in semiconductor devices”

In the new CD Laboratory at the TU Wien, Infineon Technologies AG, ams AG and Global TCAD Solutions GmbH are working together on understanding the physics of gate oxide reliability in semiconductor devices.


GTS@IEEE-ICEE in Bangalore – invited talk by Zlatan Stanojević

Zlatan Stanojević, CTO of Global TCAD Solutions, will hold a talk on "Innovation in TCAD from a Start-Up Perspective" in the Modelling and Simulation session, at 15:15 on Dec. 18th, 2018.


IEDM 2018, MOS-AK Workshop in San Francisco

Visit the GTS booth in the IEDM exhibits area and join our presentation at MOS-AK workshop on Dec 5


GTS Framework 2018.09

New applications: TCAD in DTCO, self-heating (SH) simulation for logic cells, germanium gate-all-around architectures (GAA)


TCAD in DTCO: Cell Designer - GTS Paper @ ESSDERC 2018

GTS presenting first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells.


NC-FET, FeRAM: GTS @ VLSI and NCFET Research Grant

Next to its contribution at VLSI/SNW 2018, GTS takes part in a FFG research project to create a 3D TCAD model for ferroelectric materials.


V-NAND application example: Channel trans-conductance

Modeling and simulation of V-NAND poly-silicon channel trans-conductance, including variability


GTS @ EuroSOI-ULIS 2018: Scaling limits of FD-SOI

Presenting a Physical Modeling Study Based on 3D Phase-Space Subband Boltzmann Transport for Fully-Depleted SOI Technology


GTS Framework 2018.03

New applications: V-NAND transconductance variability, physical simulation of FD-SOI technology


GTS @ IEDM 2017: Cell Simulation, DTCO

Visit the GTS booth in the IEDM exhibits area to learn about our latest products and developments!


Service Point in Taiwan R.O.C.

Introducing GTS local representative for East Asia


Listed by European Commission Innovation Radar 2017

GTS was identified as one of the top 10 "Best Young SME" by the European Commission Innovation Radar 2017.


IEEE EDS Delhi Workshop, AICTE / IIT(BHU) Varanasi

GTS workshops at two events in India, coordinated by our partner TNL.