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Next to its contribution at VLSI/SNW 2018, GTS takes part in a FFG research project to create a 3D TCAD model for ferroelectric materials.
Modeling and simulation of V-NAND poly-silicon channel trans-conductance, including variability
Presenting a Physical Modeling Study Based on 3D Phase-Space Subband Boltzmann Transport for Fully-Depleted SOI Technology
New applications: V-NAND transconductance variability, physical simulation of FD-SOI technology
Visit the GTS booth in the IEDM exhibits area to learn about our latest products and developments!
Introducing GTS local representative for East Asia
GTS was identified as one of the top 10 "Best Young SME" by the European Commission Innovation Radar 2017.
GTS workshops at two events in India, coordinated by our partner TNL.
TechNextLab becoming GTS partner for distribution and support in India.
Physical Modeling of Irradiation Effects in nano-scaled CMOS Logic and Memory Devices
Towards Physics-based DTCO for N7 and sub-N7 Technologies
TCAD-Based Characterization of Logic Cells: Power, Performance, Area, and Variability
GTS presenting TCAD modeling toolchain for irradition effects in nano-scale CMOS logic devices using layout-based design
GTS giving course at IMEC academy on march 29-30, 2017.Included is a hands-on session with multiple topics in the field of advanced CMOS simulation.
GTS' paper 04.1 "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD" was ranked on third place.
In their 2016 IEDM paper, GTS scientists present latest results with direct implications on upcoming nanowire technologies.
CTO presenting GTS' unique and robust combination of SB-BTE, DD and Poisson approaches for reliable predictions of device performance
GTS scientists present a novel simulation approach for transport modeling in nano-scaled devices
GTS moves in to spacious office at central location in Vienna
GTS CTO to present simulation study on the feasibility of silicon as material for ultra-scaled nanowire field-effect transistors