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Events and Latest Developments at GTS
Please find below the newest and past releases of or our corporate news.
We would love to inform you about relevant events and developments at GTS,
and welcome you to subscribe to our RSS newsfeed.
(We keep distortion to a minimum, not releasing more than ca. 12 items per year.)
23.07.2020
GTS@ Virtual SISPAD 2020: S/D-Tunnelling in 3nm SiGe/Ge
Pioneering for the 3nm node, GTS to present subband BTE solver with fully integrated source/drain-tunneling current calculation based on the WKB-approximation.
02.12.2019
IEDM 2019: Emerging Transistor Reliability and Pertinent Strategies
GTS Scientist Franz Schanovsky member of IEDM Reliability of Systems and Devices Committee, co-chairing session Emerging Transistor Reliability and Pertinent Strategies
18.09.2019
ESSDERC: Chairing session "Multi-physics Modeling"
Meet GTS CTO Zlatan Stanojević in Krakòw
04.09.2019
GTS @SISPAD 2019 in Udine: VNAND SONOS Variability
3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory (D. Verreck, co-authored by GTS)
29.05.2019
Visit us at DAC 2019!
From June 2nd to 6th we will be at the Design Automation Conference 2019 in Las Vegas Convention Center.Visit our us at booth 1118 (next to the Coffee Area) - and /or come to poster session 125.19 where we will present the...
18.02.2019
GTS is proud to hire the lead developer of compact physics software Comphy
GTS scientific team enhanced by oxide reliability modeling specialist
17.01.2019
New Christian Doppler Lab on “single defect spectroscopy in semiconductor devices”
In the new CD Laboratory at the TU Wien, Infineon Technologies AG, ams AG and Global TCAD Solutions GmbH are working together on understanding the physics of gate oxide reliability in semiconductor devices.
17.12.2018
GTS@IEEE-ICEE in Bangalore – invited talk by Zlatan Stanojević
Zlatan Stanojević, CTO of Global TCAD Solutions, will hold a talk on "Innovation in TCAD from a Start-Up Perspective" in the Modelling and Simulation session, at 15:15 on Dec. 18th, 2018.
04.12.2018
IEDM 2018, MOS-AK Workshop in San Francisco
Visit the GTS booth in the IEDM exhibits area and join our presentation at MOS-AK workshop on Dec 5
27.11.2018
GTS Framework 2018.09
New applications: TCAD in DTCO, self-heating (SH) simulation for logic cells, germanium gate-all-around architectures (GAA)
10.09.2018
TCAD in DTCO: Cell Designer - GTS Paper @ ESSDERC 2018
GTS presenting first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells.
17.06.2018
NC-FET, FeRAM: GTS @ VLSI and NCFET Research Grant
Next to its contribution at VLSI/SNW 2018, GTS takes part in a FFG research project to create a 3D TCAD model for ferroelectric materials.
10.04.2018
V-NAND application example: Channel trans-conductance
Modeling and simulation of V-NAND poly-silicon channel trans-conductance, including variability
19.03.2018
GTS @ EuroSOI-ULIS 2018: Scaling limits of FD-SOI
Presenting a Physical Modeling Study Based on 3D Phase-Space Subband Boltzmann Transport for Fully-Depleted SOI Technology
15.03.2018
GTS Framework 2018.03
New applications: V-NAND transconductance variability, physical simulation of FD-SOI technology
22.11.2017
GTS @ IEDM 2017: Cell Simulation, DTCO
Visit the GTS booth in the IEDM exhibits area to learn about our latest products and developments!
07.10.2017
Listed by European Commission Innovation Radar 2017
GTS was identified as one of the top 10 "Best Young SME" by the European Commission Innovation Radar 2017.
13.07.2017
IEEE EDS Delhi Workshop, AICTE / IIT(BHU) Varanasi
GTS workshops at two events in India, coordinated by our partner TNL.
