GTS & SENSOTERIC: Exciting Kick-off Meeting in Dresden, Germany
First meeting of the European Union Horizon Project SENSOTERIC about RFET and NDR transistor technologies
Read MoreInvited talk at EDTM Bangalore
Our CEO will hold a keynote on “Efficient and Accurate DTCO Framework for Reliability and Variability-Aware Explorations of FinFETs, Nanosheets, and Beyond”, on this year’s EDTM in Bangalore.
Read MoreGTS @IEDM2023 – Process to Circuit
DTCO Flows that Work: Process – physics-based device simulation – circuit simulation. All covered in GTS Framework.
Read MoreGTS @ ESSDERC 2023: Ferroelectric VNAND Memory
Combine the competing effects of ferroelectricity and charge trapping in a single simulation work-flow in GTS Framework – nicely matching experiment results from literature.
Read MoreGTS @DAC2023 – DTCO with Process Integration
DTCO, Process, Variability & Yield: Use GTS ProEmu process modules to easily explore designs for new technology platforms. Optimize for device PPA as well as production yield.
Read MoreIMW2023: Tutorial on 3D SONOS Flash TCAD Modeling
Franz Schanovsky will share insights about the techniques and challenges of 3D TCAD modeling of a FLASH memory. Join him in Montreal on May 21st, 2023!
Read MoreWanted: Java Developer
We want you for software development for our Java applications, development of distributed systems, some GUI programming and data science and processing!
Read MoreIEDM Paper: Nanosheet SRAM DTCO targeting the 3nm node
In a performance & variability-aware DTCO flow, we benchmark Gate-all-around nanosheets for 3nm. Despite lower parasitic capacitances of fins, nanosheet SRAMs achieve better Vmin, read delay, and footprint.
Read MoreESSDERC 2022 – Paper: Wave-Function Penetration in MOSFETs
GTS presenting novel semi-analytical model for wave-function penetration, resolving long-standing problems such as carrier spillover and large errors in surface roughness scattering.
Read MoreGTS @SISPAD2022: CSFET, PCM/PRAM OTS
SISPAD 2022 in Granada: DoS Engineering of Cold-Source FET (CSFET) and Monolithic TCAD Simulation of Phase-Change (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device
Read MoreGTS @DAC2022: SPICE up Your TCAD for Fast DTCO
From Days to Minutes: Cut Simulation Time in DTCO, with Full Accuracy. Combining the benefits of TCAD and SPICE, the GTS DTCO flow makes large-cell variability studies a snap.
Read MoreFerroelectrics: Polycrystalline Thin Films (TED), Hafnia-based gatestacks (IRPS)
In his recent IEEE TED article on ferroelectric polycrystalline thin film modeling, GTS scientist M. Thesberg compares 7 Landau and MC based as well as the Preisach model to experimental data.
Thesberg also contributed to B. Truijen’s paper on trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.
GTS @IEDM2021 – 3D NAND, AI, DTCO
DTCO Flows that Work: Why physics-based device simulation in fact is a prerequisite for getting dependable and accurate predictions for upcoming technology nodes.
Read MoreGTS @DAC2021 – Physical Again, Boosting DTCO
Meet us in real physical space, learn how physics-based device simulation boosts DTCO and path-finding as well as optimizing for reliability and yield.
Read MoreSISPAD 2021: Variability-Aware DTCO Flow
On this year’s SISPAD we presented our newest data on Variability-Aware DTCO Flow.
Read MoreVirtual ESSDERC 2021: Simulation and Modeling of Defects and Traps
GTS CTO Zlatan Stanojević is chairing session Simulation & Modeling of Defects & Traps together with Denis Rideau (STMicroelectronics) — Thursday September 16, 2021 (16:00-17:00)
Read MoreIEEE TED Paper: Nano Device simulator – A Practical Subband-BTE Solver for Path-Finding and DTCO
Initially released in 2015, NDS has evolved to become the standard tool for modeling carrier transport in nano-scale MOSFETs in industry and academia; we disclose details on NDS’ features and methods.
Read MoreHow can quantum transport models be implemented into device TCAD?
We address this question in one of our research projects, in cooperation with TU Wien: NEDEVS (Nanoelectronic Device Simulation), an FFG national bridge project, which was started at the end of last year and will continue for 2,5 more years.
Read MoreNDS and CellDesigner join forces to simulate a radically new SRAM architecture based on SGT
A new SRAM architecture based on vertical surrounding gate transistor (SGT) technology was designed for the 1.5nm node by Unisantis in cooperation with GTS using GTS’ DTCO flow.
Read More3D NAND Simulation: a new approach for ISPP modeling
New TCAD model solves longstanding discrepancy between predicted and measured incremental step pulse programming (ISPP) data.
Read MoreMeet Gerhard Rzepa presenting a Reliability-aware DTCO Flow at Virtual IRPS 2021
This simulation approach, combining TCAD and SPICE, will make future technologies more efficient and reliable.
Read MoreGTS leading the way to process-aware layout-based structure emulation for DTCO
Within our wide range of research projects, we started a new venture in cooperation with TU Wien scientists. The project goal is to establish process-aware layout-based structure emulation for DTCO until end of 2022.
Read MoreNew GTS Web Site
We have completely revised our web site, for more clarity, improved experience on mobile devices, and a better MyGTS.
Read MoreGTS@ Virtual SISPAD 2020: S/D-Tunnelling in 3nm SiGe/Ge
Pioneering for the 3nm node, GTS to present subband BTE solver with fully integrated source/drain-tunneling current calculation based on the WKB-approximation.
Read MoreIEEE IEDM: Emerging Transistor Reliability and Pertinent Strategies
GTS Scientist Franz Schanovsky will be co-chairing the session Emerging Transistor Reliability and Pertinent Strategies
Read MoreESSDERC: Chairing session “Multi-physics Modeling”
We are looking forward to seeing you at ESSDERC 2019 in Kraków: Our CTO Zlatan Stanojević will be chairing session C2L-G “Multi-physics Modeling” (Track 3), together with Viktor Sverdlov.
Read MoreGTS @SISPAD 2019 in Udine: VNAND SONOS
At the 2019 SISPAD in Udine, we invite you to hear D. Verreck’s talk “3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory”, co-autored by GTS scientists.
Read MoreVisit us at DAC 2019!
From June 2nd to 6th we will be at the Design Automation Conference 2019 in Las Vegas Convention Center. Download GTS Cell Designer (DAC) flyer, explaining our poster
Read MoreGTS is proud to hire the lead developer of compact physics software Comphy
GTS scientific team enhanced by oxide reliability modeling specialist
Read MoreNew Christian Doppler Lab on “single defect spectroscopy in semiconductor devices”
In the new CD Laboratory at the TU Wien, Infineon Technologies AG, ams AG and Global TCAD Solutions GmbH are working together on understanding the physics of gate oxide reliability in semiconductor devices.
Read MoreGTS@IEEE-ICEE in Bangalore – invited talk by Zlatan Stanojević
Zlatan Stanojević, CTO of Global TCAD Solutions, will hold a talk on “Innovation in TCAD from a Start-Up Perspective” in the Modelling and Simulation session, at 15:15 on Dec. 18th, 2018.
Read MoreIEDM 2018, MOS-AK Workshop in San Francisco
Visit the GTS booth in the IEDM exhibits area and join our presentation at MOS-AK workshop on Dec 5!
Read MoreTCAD in DTCO: Cell Designer – GTS Paper @ ESSDERC 2018
GTS presenting first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells.
Read MoreNC-FET, FeRAM: GTS @ VLSI and NCFET Research Grant
Next to its contribution at VLSI/SNW 2018, GTS takes part in a FFG research project to create a 3D TCAD model for ferroelectric materials.
Read MoreV-NAND application example: Channel trans-conductance
Mobility reduction at grain boundaries in V-NAND device
Read MoreGTS @ EuroSOI-ULIS 2018: Scaling limits of FD-SOI
Presenting a Physical Modeling Study Based on 3D Phase-Space Subband Boltzmann Transport for Fully-Depleted SOI Technology
Read MoreGTS Framework 2018.03
New applications: V-NAND transconductance variability, physical simulation of FD-SOI technology
Read MoreGTS @ IEDM 2017: Cell Simulation, DTCO
Visit the GTS booth in the IEDM exhibits area to learn about our latest products and developments!
Read MoreListed by European Commission Innovation Radar 2017
GTS was identified as one of the top 10 “Best Young SME” by the European Commission Innovation Radar 2017.
Read MoreIEEE EDS Delhi Workshop, AICTE / IIT(BHU) Varanasi
GTS workshops at two events in India, coordinated by our partner TNL.
Read MoreNew GTS Partner in India
TechNextLab becoming GTS partner for distribution and support in India.
Read MoreIWRMN-EDHE 2017 Invited Talk: From Impact to Upset
Physical Modeling of Irradiation Effects in nano-scaled CMOS Logic and Memory Devices
Read MoreJoin our event at VLSI-TSA: DTCO for Advanced Nodes
Towards Physics-based DTCO for N7 and sub-N7 Technologies
Read MoreGTS @ 12th ESA Geant4 Space Users Workshop
GTS presenting TCAD modeling toolchain for irradition effects in nano-scale CMOS logic devices using layout-based design
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